مشخصات پژوهش

عنوان	Electrical and electronic properties of strained mono-layer InTe
نوع پژوهش	مقاله چاپ‌شده در مجلات علمی
کلیدواژه‌ها	DFT, Effective mass,Two dimensional, Monolayer InTe
چکیده	In this paper, electrical and electronic properties of strained mono-layer InTe with two structures, 𝛼 and beta phases, are explored. The band structure is investigated using density functional theory (DFT) and the conduction band energy in the first Brillouin is calculated. The number and location of valleys are determined. The minimum energy and effective mass of the conduction band and second conduction band for different strains are calculated. A FET with using InTe as the channel material is investigated. Voltage-current characteristics of InTe FET is calculated and I ON∕IOFF ratio is obtained with respect to biaxial strain.
پژوهشگران	شعیب بابایی توسکی (نفر اول)، محمد آریاپور (نفر دوم)، سیدمنوچهر حسینی پیلانگرگی (نفر سوم)