مشخصات پژوهش

عنوان	Competition of Contact Resistance and Ferroelectric Gate Oxide on the Performance of Double-Gate MoS2 Monolayer FET
نوع پژوهش	مقاله ارائه شده کنفرانسی
کلیدواژه‌ها	Contact resistance, Ferroelectric, Top of the Barrier, MoS2
چکیده	In this work, A Ferroelectric-FET (Fe-FET) with two dimensional MoS2 as the channel material is explored. Fe-FET with contact resistance is compared with no contact resistance. Top of the barrier model along with Ferroelectric model is used to investigate performance of Fe-FET. Contact resistance can highly affect current-voltage characteristic. FET with contact resistance needs higher voltage for supply voltage. However, Ferroelectric in gate oxide can compensate contact resistance and decreases supply voltage. Ferroelectric with negative capacitance increases gate capacitance and decreases sub-threshold swing. It is shown Sub-threshold swing can be tuned with Ferroelectric thickness.
پژوهشگران	شعیب بابایی توسکی (نفر اول)، سیدمنوچهر حسینی پیلانگرگی (نفر دوم)