عنوان
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Passive and Semiconducting Properties Assessment of Commercially Pure Tantalum in Hanks Physiological Solution
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نوع پژوهش
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مقاله چاپشده در مجلات علمی
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کلیدواژهها
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commercial pure tantalum, EIS, Hanks physiological solution, SEM
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چکیده
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In this study, various electrochemical measurements were used to evaluate the passive and semiconducting properties of commercially pure tantalum (Ta) in Hanks physiological solution at 310 K (37 C). Potentiodynamic polarization and electrochemical impedance spectroscopy results show that the passivation of pure Ta immersed in Hanks physiological solution improves over time. Mott–Schottky (M–S) tests indicate that the passive layers of pure Ta in Hanks physiological solution behave as n-type semiconductors and longer immersion times do not lead to any inversion of semiconducting behavior. Additionally, M–S tests show that as the immersion time increases, the donor density of the passive layer decreases. Finally, scanning electron microscope micrographs and energy-dispersive spectroscopy results reveal that Ta is less likely to experience significant pitting or buildup of undesirable corrosion products after longer immersion times in this physiological solution.
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پژوهشگران
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آرش فتاح الحسینی (نفر اول)، مهدی پورمحمود (نفر دوم)
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