مشخصات پژوهش

عنوان	Strain Effects on the Drain Current Hysteresis of Ferroelectric DGFET
نوع پژوهش	مقاله ارائه شده کنفرانسی
کلیدواژه‌ها	MoS2, FeDGFET, Ferroelectric, DGFET, Strain
چکیده	The effects of biaxial strain on the drain current hysteresis of ferroelectric double gate field effect transistor (FeDGFET) have been investigated. Single layer MoS2 has been used as the channel and top-of-the-barrier model has been used to calculate drain current of FeDGFET. The results indicate that by applying strain, ON-current of the transistor increases. Besides, tensile strain decreases drain current hysteresis and increases drain-source resistance by a factor of 2 while compressive strain has an inverse effects.
پژوهشگران	سیدمنوچهر حسینی پیلانگرگی (نفر اول)، زهرا سهرابی (نفر دوم)، محمد امین قاسمی (نفر سوم)