مشخصات پژوهش

عنوان	Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal
نوع پژوهش	مقاله چاپ‌شده در مجلات علمی
کلیدواژه‌ها	Computer simulation, Heat transfer, Fliud flows, Czochralski method, Semiconducting germanium
چکیده	In this paper, a set of numerical simulations of fluid flow, temperature gradient, thermal stress and dislocation density for a Czochralski setup used to grow IR optical-grade Ge single crystal have been done for different stages of the growth process. A two-dimensional steady state finite element method has been applied for all calculations. The obtained numerical results reveal that the thermal field, thermal stress and dislocation structure are mainly dependent on the crystal height, heat radiation and gas flow in the growth system.
پژوهشگران	محمد حسین توکلی (نفر اول)، الهه کبیری رنانی (نفر دوم)، محترم هنرمندنیا (نفر سوم)، مهدی اژئیان (نفر چهارم)