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چکیده
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Graphene was grown on molybdenum (Mo) foil by a chemical vapor deposition method at different growth temperatures (1000°C, 1100°C, and 1200°C). The properties of graphene were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, and Ra- man spectroscopy. The results showed that the quality of the deposited graphene layer was affected by the growth temperature. XRD results showed the presence of a carbide phase on the Mo surface; the presence of carbide was more intense at 1200°C. Additionally, a higher I2D/IG ratio (0.418) was observed at 1200°C, which implies that there are fewer graphene lay- ers at this temperature. The lowest ID/IG ratio (0.908) for the graphene layers was obtained at 1200°C, suggesting that graphene had fewer defects at this temperature. The size of the graphene domains was also calculated. We found that by increasing the growth temperature, the graphene domain size also increased.
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