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چکیده
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In this study, Indium Tin Oxide (ITO) thin films have been prepared by electron beam deposition method on glass substrates. The films deposition was carried out in deposition rate 0.10 nms-1to produce thin films with thicknesses of about 50, 100 and 170 nm. The substrates temperature, during the film deposition, was kept constant at 400 ̊C. A grazing incidence X-ray reflectivity (XRR) technique is used to characterize ITO thin films. Data analysis was carried out using MATLAB, GENX and XPOWDER software to obtain roughness, real thickness and mean electron density of ITO thin films.
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