Materials of ultrafine–grained (UFG) have attracted great attention in the last twenty years. Some severe plastic deformation (SPD) procedures have been utilized for producing UFG materials in which the accumulative roll bonding (ARB) process acts as the most effective procedure among them. UFG Structure demonstrates a progress in mechanical properties in addition to different corrosion behavior. Nevertheless, it does not always lead to better corrosion resistance. Various relevant investigations will be reviewed in this paper to consider semiconducting behavior of UFG Cu that has been produced by ARB process. Analysis of Mott–Schottky (M–S) is a major in-situ method to analyze semiconductor properties of passive layers. Thus, the effect of grain size arising from ARB process on copper semiconducting behavior has been evaluated in relevant passive media by M–S analysis in this study.
