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Title
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Negative-Capacitance Effects in 2D Double Gate Field-Effect Transistors
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Type
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Presentation
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Keywords
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NCFET, MoS2, subthreshold swing, NCDGFET
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Abstract
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In this paper, a new 2D double gate field effect transistor (DGFET) is presented. In the proposed structure ferroelectric is used in double side of the DGFET and single layer MoS2 has been used as the channel of the DGFET. The effect of ferroelectric layer on the subthreshold swing is investigated in the proposed DGFET using an analytical subthreshold model. Analytical models demonstrate that using ferroelectric in double side of 2-D DGFET improves average subthreshold swing to about 18 mV/dec.
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Researchers
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zahra sohrabi (Third Researcher), hamidreza Karami (Second Researcher), seyed manouchehr hosseini pilangorgi (First Researcher)
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