In this paper, electrical and electronic properties of strained mono-layer InTe with two structures, 𝛼 and beta phases, are explored. The band structure is investigated using density functional theory (DFT) and the conduction band energy in the first Brillouin is calculated. The number and location of valleys are determined. The minimum energy and effective mass of the conduction band and second conduction band for different strains are calculated. A FET with using InTe as the channel material is investigated. Voltage-current characteristics of InTe FET is calculated and I ON∕IOFF ratio is obtained with respect to biaxial strain.
