In this paper, the efects of layer number on the electronic bandstructure and electron mobility of strained multi-layer MoS2 have been investigated. Ab initio simulations are utilized to investigate the bandstructure of multi-layer MoS2, and its lowfeld mobility has been calculated by the linearized Boltzmann transport equation. The results indicate that tensile strain increases the electron mobility of multi-layer MoS2, and this increment is proportional to layer number. Increasing the layer number decreases the mobility of MoS2, but application of strain and also increasing the impurity concentration reduces the dependence of mobility on the layer number. It is expected that the calculated mobility for a larger number of layers (beyond 4) reaches the bulk mobility.
