The effects of biaxial strain on the direct-current (DC) performance of transition-metal dichalcogenide (TMD)-based double gate field-effect transistors (DGFETs) were investigated. The TMDs used as the transistor channel were MoS2, MoSe2, WS2, and WSe2. The results indicated that tensile strain increased the DC performance of the DGFET, and that this performance enhancement was greater for the DGFET based on WSe2 compared with the other TMDs. Small compressive strain decreased the performance of the transistor, but with larger compressive strain, this performance degradation was partly recovered.
