سیدمنوچهر حسینی پیلانگرگی

In this paper the effects of layer number on the electronic bandstructure and electron mobility of strained multilayer MoS2 have been investigated. Ab initio simulations are utilized to investigate the bandstructure of multilayer MoS2 and low-field mobility of it has been calculated by the linearized Boltzmann transport equation. The results indicate that tensile strain increases electron mobility of multilayer MoS2 and this increment for three and four layer MoS2 is much more than of it for single layer MoS2. Increasing the layer number, decreases the mobility of MoS2, but application of tensile strain reduces the dependence of mobility on the layer number.