The mass and heat transfer in an inductively heated Czochralski crystal growth furnace during a crystal growth process is investigated numerically for a germanium semiconductor. The RF coil position is fixed at all growth stages. The results show that the temperature and velocity fields are changed, and the convexity of the crystal–melt interface increases with the grown crystal length. The temperature difference in the melt is about 50–60 K and the melt at the bottom of the crucible is crystallized.
