In this article we calculated the thermal conductivity of one-dimensional devices specifically in a Si nanowire . The method used is solving the Boltzmann transport equation for phonon scattering taking into account Umklapp scattering, mass-difference scattering, phonon-electron scattering and boundary scattering. The results show that the thermal conductivity in semiconductor nanowires is less than that of bulk devices. The reduction of thermal conductivity of a nanowire is attributed to the dominant boundary scattering mechanism. The implemented theoretical calculated results agree qualitatively with the recent experimentally and theoretically descent of the lattice thermal conductivity in silicon one dimensional devices.
