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Arash Fattah-alhosseini

Arash Fattah-alhosseini

Academic rank: Professor
ORCID:
Education: PhD.
ScopusId: 26428133600
HIndex:
Faculty: Faculty of Engineering
Address:
Phone: 08138292505

Research

Title
On the passive and semiconducting behavior of severely deformed pure titanium in Ringer's physiological solution at 37 °C: A trial of the point defect model
Type
JournalPaper
Keywords
Titanium Ringer's physiological solution Nano-grained PDM Mott–Schottky
Year
2017
Journal Materials Science and Engineering: C
DOI
Researchers ، Arash Fattah-alhosseini

Abstract

The effects of sever plastic deformation through multi-pass accumulative roll bonding on the passive and semiconducting behavior of pure titanium is evaluated in Ringer's physiological solution at 37 °C in the present paper. Produced results by polarization plots and electrochemical impedance spectroscopy measurements revealed a significant advance in the passive response of the nano-grained sample compared to that of the annealed pure titanium. Also, Mott–Schottky test results of the nano-grained pure titanium represented a lower donor density and reduced flat-band potential in the formed passive film in comparison with the annealed sample. Moreover, based on the Mott–Schottky analysis in conjunction with the point defect model, it was suggested that with increase in formation potential, the calculated donor density of both annealed and nano-grained samples decreases exponentially and the thickness of the passive film linearly increases. These observations were consistent with the point defect model predictions, considering that the point defects within the passive film are metal interstitials, oxygen vacancies, or both. From the viewpoint of passive and semiconducting behavior, nano-grained pure titanium appeared to be more suitable for implant applications in simulate human body environment compared to annealed pure titanium.