مشخصات پژوهش

صفحه نخست /Very large strain gauges ...
عنوان
Very large strain gauges based on single layer MoSe2 and WSe2 for sensing applications
نوع پژوهش مقاله چاپ‌شده
کلیدواژه‌ها
Strain gauge, MoSe2, WSe2, Sensing application
چکیده
Here, we propose a strain gauge based on single-layer MoSe2 and WSe2 and show that, in these materials, the strain induced modulation of inter-valley phonon scattering leads to large mobility changes, which in turn result in highly sensitive strain gauges. By employing density-functional theory bandstructure calculations, comprehensive scattering models, and the linearized Boltzmann equation, we explain the physical mechanisms for the high sensitivity to strain of the resistivity in single-layer MoSe2 and WSe2, discuss the reduction of the gauge factor produced by extrinsic scattering sources (e.g., chemical impurities), and propose ways to mitigate such sensitivity degradation.
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